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Location:Home > IXYS POWER DEVICES DISCRETE MOSFETs IXFN180N15P

                                                                                      IXYS POWER DEVICES DISCRETE MOSFETs IXFN180N15P

IXYS POWER DEVICES DISCRETE MOSFETs IXFN180N15P PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

Features• International standard package• Encapsulating epoxy meetsUL 94 V-0, flammability classification• miniBLOC with Aluminium nitride isolation
Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance-easy to drive and to protect

Advantages:Easy to mount Space savings High power density

                                                                                                       

IXFH69N30P

300

69

0.0490

4960

156

100

200

500

0.25

TO-247

IXFT69N30P

300

69

0.0490

4960

156

100

200

500

0.25

TO-268

IXFH88N30P

300

88

0.0400

6300

180

-

200

600

0.21

TO-247

IXFQ94N30P3

300

94

0.036

5510

102

-

250

1040

0.120

TO-3P

IXFT94N30P3

300

94

0.036

5510

102

-

250

1040

0.120

TO-268

IXFH94N30P3

300

94

0.036

5510

102

-

250

1040

0.120

TO-247

IXFK102N30P

300

102

0.0330

7500

224

-

200

700

0.18

TO-264

IXFL210N30P3

300

108

0.016

16200

268

-

250

520

0.240

ISOPLUS264

IXFK120N30P3

300

120

0.027

8630

150

-

250

1130

0.110

TO-264

IXFX120N30P3

300

120

0.027

8630

150

-

250

1130

0.110

PLUS247

IXFK140N30P

300

140

0.0240

14800

185

-

200

1040

0.12

TO-264

IXFX150N30P3

300

150

0.019

12100

197

-

250

1300

0.096

PLUS247

IXFK150N30P3

300

150

0.019

12100

197

-

250

1300

0.096

TO-264

IXFB170N30P

300

170

0.0180

20000

258

-

200

1250

0.10

PLUS264

IXFN210N30P3

300

192

0.0145

16200

268

-

250

1500

0.083

SOT-227

IXFB210N30P3

300

210

0.0145

16200

268

-

250

1890

0.066

PLUS264

  


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