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Location:Home > IXYS POWER DEVICES DISCRETE MOSFETs IXFN230N10

                                                                                      IXYS POWER DEVICES DISCRETE MOSFETs IXFN230N10

IXYS POWER DEVICES DISCRETE MOSFETs IXFN230N10 HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr

IXFN 230N10 VDSS = 100 V ID25 = 230 A RDS(on) = 6 mW trr < 250 ns

Features:International standard packages miniBLOC, with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier

Applications:DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls

Advantages:Easy to mount Space savings High power density

                                                                                                         

IXFH58N20Q IXFR58N20Q IXFT58N20Q IXFH80N20Q IXFK80N20Q IXFR80N20Q IXFT80N20Q IXFH40N30Q IXFT40N30Q IXFH52N30Q IXFK52N30Q IXFT52N30Q
IXFE73N30Q IXFK73N30Q IXFN73N30Q IXFX73N30Q IXFH26N50Q IXFR26N50Q IXFT26N50Q IXFH28N50Q IXFH32N50Q IXFJ32N50Q IXFK32N50Q IXFR32N50Q
IXFT32N50Q IXFX32N50Q IXFE48N50Q IXFK48N50Q IXFN48N50Q IXFR48N50Q IXFX48N50Q IXFH26N60Q IXFK26N60Q IXFR26N60Q IXFT26N60Q IXFH15N80Q
IXFR15N80Q IXFT15N80Q IXFH20N80Q IXFK20N80Q IXFT20N80Q IXFK27N80Q IXFN27N80Q IXFX27N80Q IXFH12N90Q IXFM12N90Q IXFT12N90Q IXFH16N90Q
IXFK16N90Q IXFT16N90Q IXFA4N100Q IXFH4N100Q IXFP4N100Q IXFR4N100Q IXFT4N100Q IXFH6N100Q IXFT6N100Q IXFH12N100Q IXFR12N100Q IXFT12N100Q IXFH15N100Q IXFK15N100Q IXFT15N100Q IXFK21N100Q IXFN21N100Q IXFR21N100Q IXFX21N100Q

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